Sprenger, Jaclyn Kelly. Electron Enhanced Atomic Layer Deposition (ee-ald) for Room Temperature Growth of Gallium Nitride, Silicon, and Boron Nitride Films.
APA
Sprenger, J.Electron Enhanced Atomic Layer Deposition (Ee-Ald) for Room Temperature Growth of Gallium Nitride, Silicon, and Boron Nitride Films.
Chicago
Sprenger, Jaclyn Kelly.Electron Enhanced Atomic Layer Deposition (ee-Ald) for Room Temperature Growth of Gallium Nitride, Silicon, and Boron Nitride Films.