Citation Formats

MLA

Sprenger, Jaclyn Kelly. Electron Enhanced Atomic Layer Deposition (ee-ald) for Room Temperature Growth of Gallium Nitride, Silicon, and Boron Nitride Films.

APA

Sprenger, J. Electron Enhanced Atomic Layer Deposition (Ee-Ald) for Room Temperature Growth of Gallium Nitride, Silicon, and Boron Nitride Films.

Chicago

Sprenger, Jaclyn Kelly. Electron Enhanced Atomic Layer Deposition (ee-Ald) for Room Temperature Growth of Gallium Nitride, Silicon, and Boron Nitride Films.